Hall Effect Experiment (HEX-RM-150/ HEX-RM-150C)
Hall Effect Experiment (Research Model).
When a current-carrying conductor is placed in a magnetic field perpendicular to the current direction, a voltage develops transverse to the cuurent. This voltage was first observed in 1879 by Edwin Hall and the effect is called Hall Effect. The Hall effect has since led to a deeper understanding of the details of the conduction process. It can yield the density of the charge carriers as well as their sign. The hall voltage for p-carriers has opposite sign from that for n-carriers. Therefore if a semiconductor with p-type doping is gradually heated up, more and more electrons from its valence band will go to conduction band. As a result hall voltage would fall rapidly with temperature and even become zero or change sign.
Technical data
- Model
- HEX-RM-150/HEX-RM-150C
- Manufacturer
- SVS Labs
- Material
- Ge single crystal n-type & p-type
- Resistivity
- 8-10W.cm
- Zero- Field potential
- <1mV (adjustable)
- Hall Voltage
- 25-35mV/10mA/KG
- Zero-field potential
- <1mV (adjustable)
- Range
- 1mV, 10mV, 100mV, 1V
- Resolution
- 1 mV
- Accuracy
- ±0.2% ±1 digit
- Stability
- Within ±1 digit
- Used in physics and electronics laboratories for hall effect experiment-related experiments.
- Suitable for undergraduate teaching, postgraduate coursework, and research projects.
- Compact bench-top design fits standard laboratory benches and demonstration setups.
- Hall Effect Experiment (Research Model)
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