Study of energy band-gap and diffusion potential of P-N Junctions (PN-01)
Study of the energy band-gap and diffusion potential of P-N Junctions, Experiments Given below is a brief description of the experiments that may, 10 8 6 4 SES INSTRUMENTS DV = 0.18 2 h=.
This is an advanced level experiment to be performed on commercially available diodes viz. germanium or silicon diodes, various types of LED’s and also on the baseemitter/collector-base junctions of a transistor. The results of the experiments not only give the device characteristics but also provide an insight into the properties of the materials used in the fabrication of the junction. In the set-up, all the necessary instrumentation is integrated as a result of which a minimum of external connections need to be made by the user. A CRO is the only accessory that is required. obtained. This line intersects the current (lnI) axis at lnI0 and its slope DV/DlnI may be solved to compute h. (fig.1)
Technical data
- Model
- PN-01
- Manufacturer
- SVS Labs
- Experimental Determination of
- obtained. This line intersects the current (lnI) axis at lnI0
- Used in physics and electronics laboratories for study of energy band-gap and diffusion potential of p-n junctions-related experiments.
- Suitable for undergraduate teaching, postgraduate coursework, and research projects.
- Compact bench-top design fits standard laboratory benches and demonstration setups.
- Study of the energy band-gap and diffusion potential of P-N Junctions
- Experiments Given below is a brief description of the experiments that may
- 10 8 6 4 SES INSTRUMENTS DV = 0.18 2 h=
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